Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Résistance contact")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 2534

  • Page / 102
Export

Selection :

  • and

Wear of contact elements in electromechanical switchesMYSHKIN, N. H; KONCHITS, V. V; KIRPICHENKO, YU. E et al.Wear. 1995, Vol 181-83, Num 2, pp 691-699, issn 0043-1648Conference Paper

Plasma sputtering of copper coatings on aluminum electrical contactsREVUN, S. A; MURAV'EVA, E. L; EGOROV, N. G et al.Russian electrical engineering. 1994, Vol 65, Num 6, pp 1-5, issn 1068-3712Article

Temperature dependence of specific contact resistivitySWIRHUN, S. E; SWANSON, R. M.IEEE electron device letters. 1986, Vol 7, Num 3, pp 155-157, issn 0741-3106Article

Effect of space angle on constriction resistance and contact resistance for the case of line contactSANO, Y.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 228-234, issn 0148-6411Article

Effect of measurement conditions on low-level contact resistanceMUNIESA, J; MOUSSON, J. Y.IEEE transactions on components, hybrids, and manufacturing technology. 1984, Vol 7, Num 1, pp 81-83, issn 0148-6411Article

Contact resistance between a solid lubricant composite and metalsWATANABE, Y; TAKAGI, R.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1983, Vol 66, Num 9, pp 557-558, issn 0387-236XArticle

Investigation of ring structures for metal-semiconductor contact resistance determinationWILLIS, A. J; BOTHA, A. P.Thin solid films. 1987, Vol 146, Num 1, pp 15-20, issn 0040-6090Article

Ion beam contacting of silicon. II: Antimony in n-siliconMERTENS, A; KLOSE, H; TANG, N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp 369-374, issn 0031-8965Article

Size effect on contact resistance and device scalingCOHEN, S. S; GILDENBLAT, G; BROWN, D. M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 4, pp 978-980, issn 0013-4651Article

Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regimeJECKELMANN, B; JEANNERET, B.IEEE transactions on instrumentation and measurement. 1997, Vol 46, Num 2, pp 276-280, issn 0018-9456Conference Paper

Contact resistance in the scanning tunneling microscope at very small distancesFERRER, J; MARTIN-RODERO, A; FLORES, F et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10113-10115, issn 0163-1829Article

Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structuresKETTERSON, A; PONSE, F; HENDERSON, T et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2305-2307, issn 0021-8979Article

A method for creating reliable and low-resistance contacts between carbon nanotubes and microelectrodesCHANGXIN CHEN; LIYUE LIU; YANG LU et al.Carbon (New York, NY). 2007, Vol 45, Num 2, pp 436-442, issn 0008-6223, 7 p.Article

Contact resistance to undoped and phosphorus-doped hydrogenated amorphous silicon filmsKANICKI, J.Applied physics letters. 1988, Vol 53, Num 20, pp 1943-1945, issn 0003-6951Article

Contact resistivity of silicon/silicide structures formed by thin film reactionsFINETTI, M; GUERRI, S; NEGRINI, P et al.Thin solid films. 1985, Vol 130, Num 1-2, pp 37-45, issn 0040-6090Article

Measurement of contact resistance with microampere currentsYOSHIDA, H; TAKAHASHI, K.IEEE transactions on instrumentation and measurement. 1990, Vol 39, Num 5, pp 711-714, issn 0018-9456Article

Elastic oscillatory resistances of small contactsGARCIA, N; ESCAPA, L.Applied physics letters. 1989, Vol 54, Num 15, pp 1418-1420, issn 0003-6951Article

A vertical Kelvin test structure for measuring the true specific contact resistivityTAN FU LEI; LEN-YI LEU; CHUNG LEN LEE et al.IEEE electron device letters. 1986, Vol 7, Num 4, pp 259-261, issn 0741-3106Article

A further comment on «determining specific contact resistivity from contact end resistance measurements»FINETTI, M; SCORZONI, A; SONCINI, G et al.IEEE electron device letters. 1985, Vol 6, Num 4, pp 184-185, issn 0741-3106Article

Einsatz von Kontaktwerkstoffen in der Nachrichtenstechnik = Utilisation de matériaux de contact dans les télécommunications = Use of contact materials in communication engineeringMARTIN, H; STANGE, H. W.Nachrichtentechnik. Elektronik. 1985, Vol 35, Num 8, pp 315-317, issn 0323-4657Article

Consequences of contact resistance in very-small-geometry CML gatesSTEVENS, E. H.Microelectronics. 1983, Vol 14, Num 5, pp 15-20, issn 0026-2692Article

Realistic spring probe testing methods and resultsGESSEL, D; SLCOUM, A; SPRUNT, A et al.Proceedings - International Test Conference. 2002, pp 417-423, issn 1089-3539, isbn 0-7803-7542-4, 7 p.Conference Paper

Modélisation du soudage par résistance par points = Resistance spot welding modelizationThieblemont, Eric; Chevrier, Jean-Charles.1992, 197 p.Thesis

Measurement of the contact resistance between the active mass and the current collector in lead/acid battery electrodesMICKA, K; CALABEK, M.Journal of power sources. 1990, Vol 30, Num 1-4, pp 315-320, issn 0378-7753Conference Paper

Method for measuring contact resistance immediately after metal depositionFAITH, T. J; O'NEILL, J. J. JR; IRVEN, R. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 4, pp 837-840, issn 0734-211XArticle

  • Page / 102